دیتاشیت HGTP5N120BND
مشخصات دیتاشیت
| نام دیتاشیت | HGTG5N120BND, HGTP5N120BND |
|---|---|
| حجم فایل | 303.028 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت HGTG5N120BND, HGTP5N120BND |
HGTG5N120BND, HGTP5N120BND Datasheet |
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مشخصات
- RoHS: true
- Type: NPT
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: onsemi HGTP5N120BND
- Operating Temperature: 55°C~+150°C@(Tj)
- Collector Current (Ic): 21A
- Power Dissipation (Pd): 167W
- Turn?on Delay Time (Td(on)): 22ns
- Total Gate Charge (Qg@Ic,Vge): 53nC
- Turn?off Delay Time (Td(off)): 160ns
- Pulsed Collector Current (Icm): 40A
- Diode Reverse Recovery Time (Trr): 65ns
- Collector-Emitter Breakdown Voltage (Vces): 1200V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.7V@15V,5A
- Package: TO-220AB-3
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Not For New Designs
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 21A
- Current - Collector Pulsed (Icm): 40A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
- Power - Max: 167W
- Switching Energy: 450µJ (on), 390µJ (off)
- Input Type: Standard
- Gate Charge: 53nC
- Td (on/off) @ 25°C: 22ns/160ns
- Test Condition: 960V, 5A, 25Ohm, 15V
- Reverse Recovery Time (trr): 65ns
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Base Part Number: HGTP5N120
- detail: IGBT NPT 1200V 21A 167W Through Hole TO-220-3
